vs-40tts12pbf, VS-40TTS12-M3 www.vishay.com vishay semiconductors revision: 26-jul-13 1 document number: 94390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor high voltage, phase control scr, 40 a features ? designed and qualified according to jedec-jesd47 ? 140 c max. operatin g junction temperature ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor control, ups, welding, and battery charge description the vs-40tts12... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 140 c junction temperature. product summary package to-220ab diode variation single scr i t(av) 25 a v drm /v rrm 1200 v v tm 1.6 v i gt 35 ma t j - 40 c to 140 c ( g ) 3 2 (a) 1 (k) to-220ab 1 2 3 available major ratings and characteristics parameter test conditions values units i t(av) sinusoidal wa v eform 25 a i rms 40 v rrm /v drm 1200 v i tsm 350 a v t t j = 25 c 1.6 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 140 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v t j c vs-40tts12p b f, VS-40TTS12-M3 1200 1200 - 25 to 140
vs-40tts12pbf, VS-40TTS12-M3 www.vishay.com vishay semiconductors revision: 26-jul-13 2 document number: 94390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current i t(av) t c = 93 c, 180 conduction half sine wave 25 a maximum rms on-state current i rms 40 maximum peak, one-cycle ? non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no voltage reapplied 350 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no voltage reapplied 630 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 6300 a 2 ? s maximum on-state voltage v tm 80 a, t j = 25 c 1.6 v low level value of on-state slope resistance r t t j = 140 c 11.4 m ? low level value of threshold voltage v t(to) 0.96 v maximum reverse and direct leakage current i rrm /i drm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 140 c 12 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a, ? t j = 25 c 100 maximum latching current i l anode supply = 6 v, resistive load, t j = 25 c 200 maximum rate of rise of off-state voltage dv/dt t j = t j max., linear to 80 c, v drm = r g - k = open 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positi ve gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = 25 c 35 ma maximum required dc gate ? voltage to trigger v gt anode supply = 6 v, resistive load, t j = 25 c 1.3 v maximum dc gate volt age not to trigger v gd t j = 140 c, v drm = rated value 0.2 maximum dc gate curre nt not to trigger i gd 1.5 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 140 c 4 typical turn-off time t q 110 thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg - 40 to 140 c maximum thermal resistance, ? junction to case r thjc dc operation 0.8 c/w maximum thermal resistance, ? junction to ambient r thja 60 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab 40tts12
vs-40tts12pbf, VS-40TTS12-M3 www.vishay.com vishay semiconductors revision: 26-jul-13 3 document number: 94390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra ting characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetiti v e surge current fig. 6 - maximum non-repetiti v e surge current average on-state current (a) maximum allowable case temperature (c 70 80 90 100 110 120 130 140 0 5 10 15 20 25 30 30? 60? 90? 120? 180? conduction angle rthjc (dc) = 0.8 ?c/w average on-state current (a) maximum allowable case temperature (c) 70 80 90 100 110 120 130 140 0 5 10 15 20 25 30 35 40 45 dc 30? 60? 90? 120? 180? conduction period rthjc (dc) = 0.8 ?c/w average on-state current (a) maximum average on-state power loss (w) 0 10 20 30 40 50 60 0 5 10 15 20 25 30 rms limit conduction angle 180? 120? 90? 60? 30? tj = 125?c average on-state current (a) maximum average on-state power loss (w) 0 10 20 30 40 50 60 70 0 10203040 dc 180? 120? 90? 60? 30? rms limit conduction period tj = 125?c number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 120 140 160 180 200 220 240 260 280 110100 at any rated load condition and with rated vrrm applied following surge. initial tj = 125?c @ 60 hz 0.0083 s @ 50 hz 0.0100 s peak half sine wave on-state current (a) pulse train duration (s) 100 150 200 250 300 350 400 0.01 0.1 1 10 versus pulse train duration. control of conduction may not be maintained. maximum non repetitive surge current initial tj = 125?c no voltage reapplied rated vrrm reapplied
vs-40tts12pbf, VS-40TTS12-M3 www.vishay.com vishay semiconductors revision: 26-jul-13 4 document number: 94390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - on-state voltage drop characteristics fig. 8 - gate characteristics fig. 9 - thermal impedance z thjc characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 1 10 100 1000 012345 tj = 25?c tj = 125?c instantaneous gate voltage (v) instantaneous gate current (a) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) (4) (3) (2) (1) tj = 2 5 ? c frequency limited by pg(av) tj = - 1 0 ? c igd vgd tr = 1 s, tp >= 6 s <= 30% rated di/dt: 10 v, 65 ohms b)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s a)recommended load line for rectangular gate pulse (1) pgm = 40 w, tp = 1 ms (2) pgm = 20 w, tp = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms tj = 1 4 0 ? c square wave pulse duration (s) transient thermal impedance z thjc (c/w) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 steady state value (dc operation) single pulse
vs-40tts12pbf, VS-40TTS12-M3 www.vishay.com vishay semiconductors revision: 26-jul-13 5 document number: 94390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating, rms value 3 - circuit configuration: 4 - package: 5 t = single thyristor - type of silicon: 6 - voltage rating (12 = 1200 v) t = to-220 s = standard recovery rectifier 7 - device code 6 2 4 3 5 7 40 t t s 12 pbf 1 v s - environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free 1 - vishay semiconductors product ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-40tts12pbf 50 1000 antist atic plastic tubes VS-40TTS12-M3 50 1000 antist atic plastic tubes links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab pbf www.vishay.com/doc?95225 to-220ab -m3 www.vishay.com/doc?95028
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